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NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
600 V
http://onsemi.com
R DS(on) (MAX) @ 1.2 A
3.6 W
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
NDF
600
NDD
Unit
V
N ? Channel
D (2)
Continuous Drain Current R q JC
I D
3.1
(Note 1)
2.6
A
Continuous Drain Current R q JC
T A = 100 ° C
Pulsed Drain Current, V GS @ 10 V
I D
I DM
2.9
(Note 1)
12
1.65
10
A
A
G (1)
Power Dissipation R q JC
Gate ? to ? Source Voltage
P D
V GS
27
± 30
61
W
V
S (3)
Single Pulse Avalanche Energy,
I D = 3.0 A
ESD (HBM) (JESD 22 ? A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T A = 25 ° C) (Figure 17)
Peak Diode Recovery (Note 2)
E AS
V esd
V ISO
dv/dt
100
3000
4500
4.5
mJ
V
V
V/ns
3
Continuous Source Current (Body
Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
I S
T L
T J , T stg
3.0
260
? 55 to 150
A
° C
° C
1
2
3
NDF03N60ZG
TO ? 220FP
CASE 221D
1
2
NDF03N60ZH
TO ? 220FP
CASE 221AH
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4
4
1. Limited by maximum junction temperature
2. I SD = 3.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1
2
3
1 2
3
NDD03N60Z ? 1G
IPAK
CASE 369D
NDD03N60ZT4G
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 7
1
Publication Order Number:
NDF03N60Z/D
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